Methods of Treating Semiconductor Substrates, Methods Of Forming Openings During Semiconductor Fabrication, And Methods Of Removing Particles From Over Semiconductor Substrates

ABSTRACT

Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath.

TECHNICAL FIELD

Methods of treating semiconductor substrates, methods of formingopenings during semiconductor fabrication, and methods of removingparticles from over semiconductor substrates.

BACKGROUND

Semiconductor fabrication may comprise exposure of a semiconductorsubstrate to one or more etchants to remove materials from thesubstrate, followed by rinsing of the substrate to remove the etchants.

Problems may occur during the rinsing if an etchant is not rapidlyquenched, in that over-etching may occur. In some applications, theetchant may be sufficiently rapidly quenched by simply flushingdeionized water across a wafer to remove the etchant. In otherapplications, flushing with deionized water alone may not be sufficientto quench an etchant with desired rapidity. For instance, if asemiconductor substrate comprises a topography with deep openings (forinstance, openings with high aspect ratios that may be utilized forforming capacitors for DRAM), etchant may remain in the bottoms of highaspect ratio features during a rinse, and continue to etch during therinse.

One method for increasing the rapidity with which etchant is quenched atthe bottoms of openings is to include a quench-inducing compositionwithin a rinsing solution. For instance, if the etchant is an acid, abase may be included within the rinsing solution to assist in quenchingthe acid. Alternatively, if the etchant is a base, an acid may beincluded in the rinsing solution. Further, hydrogen peroxide and/orhydrogen chloride may be included in a rinsing solution as aquench-inducing composition.

Problems may occur, however, in utilizing quench-inducing compositions,in that such compositions may themselves be etchants for some materialsthat are along a semiconductor substrate surface. Accordingly, theutilization of the quench-inducing compositions may alleviate someproblems, and yet induce other problems that occur from over-etchingcaused by the quench-inducing compositions.

It is desirable to develop methods which alleviate or prevent theabove-discussed over-etching problems.

Other problems that may occur during semiconductor processing are thatparticles may form across a semiconductor substrate. Various methodshave been developed for removing such particles, but yet problemsassociated with the particles persist. Accordingly, it is desired todevelop new approaches for removing particles from semiconductorsubstrates.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-3 are graphical illustrations of dynamic changes in pH,concentration and temperature, relative to time, that may occur in someembodiments.

FIG. 4 is a diagrammatic cross-sectional view of an apparatus, shown inprocess for treating a batch of wafers, in accordance with anembodiment.

FIGS. 5-8 are diagrammatic, cross-sectional views of a semiconductorwafer fragment at various process stages of an embodiment.

FIGS. 9 and 10 are diagrammatic, cross-sectional views of asemiconductor wafer fragment at sequential process stages of anembodiment.

FIGS. 11 and 12 are diagrammatic, cross-sectional views of asemiconductor wafer fragment at sequential process stages of anembodiment.

FIGS. 13 and 14 are diagrammatic, cross-sectional views of asemiconductor wafer fragment at sequential process stages of anembodiment.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

In some embodiments, it is recognized that improvements may be made tothe utilization of rinses for removing residual etch chemicals, etchresidue and particles from surfaces of semiconductor substrates.Conventional rinses may suffer from numerous problems. For instance,there may be a thick boundary layer formed between etchant solution andrinse solution within topographical features, which renders it difficultto effectively remove the etchant solution. Further, mass transportthrough such boundary layer may be diffusion limited, and thus too slowto enable rapid quenching of an etchant solution. This problem may beparticularly prevalent when there are deep vias or complex structurespresent along the surface of a semiconductor substrate.

Problems may also occur during intended removal of particles. Theparticles may be chemically absorbed onto a semiconductor surface and/orretained on the surface by electrostatic forces.

In some embodiments, the problems are addressed by dynamically alteringa rinse solution during utilization of the rinse solution. The dynamicalteration may comprise alteration of any of numerous properties of thesolution, including, for example, a temperature of the solution, a pH ofthe solution, and/or concentrations of one or more components of thesolution. FIGS. 1-3 graphically illustrate dynamic alteration of pH,concentration of a component, and temperature, respectively.

Referring to FIG. 1, a graph 10 comprises an x-axis corresponding totime, and a y-axis corresponding to pH. A curve 12 shows the variationof the pH of a rinse solution with time, and specifically shows that thepH is continuously variable over a period of time. In other words, thepH is non-static over the period of time, as opposed to reaching astatic equilibrium. The shown curve corresponds to a pH gradient. Theexample curve may be considered to comprise two iterations of a processin which the pH goes from a first value 14 (shown as a low value) to asecond value 16 (shown as a high value), and then back to the firstvalue; with one of the iterations comprising a peak 18 of curve 12, andthe other comprising a peak 20 of the curve. Although the showniterations go from a low pH to a high pH, and then back; in otherembodiments the iterations may go from a high pH to a low pH, and thenback.

The low pH 14 and high pH of 16 may differ from one another by five ormore pH units, and in some embodiments may differ from one another byeight or more pH units. For instance, the low pH 14 may correspond to 2(or another suitable acidic pH), and the high pH 16 may correspond to 10(or another suitable basic pH).

The time for each iteration from a low pH to a high pH, and back, may beany suitable duration; and may be, for example, at least a few seconds.

The curve 12 is shown to be continuously variable during the entireduration illustrated in graph 10. The fluctuation of the pH between thelow and high pH's may be referred to as pH sweeping.

The pH-sweeping may provide benefits during the rinsing of a substrateincluding, for example, inhibition of etch conditions as discussed belowwith reference to FIGS. 5-8, and assistance in particle removal asdiscussed below with reference to FIGS. 9-14.

Referring to FIG. 2, a graph 30 comprises an x-axis corresponding totime, and a y-axis corresponding to concentration. A curve 32 shows thevariation of the concentration of a composition within a rinse solutionwith time, and specifically shows that the concentration of thecomposition is continuously variable over a period of time. In otherwords, the concentration of the composition is non-static over theperiod time, as opposed to reaching a static equilibrium.

The shown curve corresponds to a concentration gradient. The curve maybe considered to comprise two iterations of a process in which theconcentration of the composition goes from a first value 34 to a secondvalue 36, and then back to the first value; with one of the iterationscomprising a peak 38 of curve 32, and the other comprising a peak 40 ofthe curve. Although the shown iterations go from a low concentration ofthe composition to a high concentration of the composition, and thenback; in other embodiments the iterations may go from a highconcentration of the composition to a low concentration of thecomposition, and then back.

The low concentration 34 and high concentration 36 may differ from oneanother by several fold, and in some embodiments may differ from oneanother by one or more orders of magnitude. For instance, thecomposition may comprise hydrogen chloride (i.e., hydrochloric acid)utilized to quench an etch, the low concentration may correspond toabout 1 ppm (part per million), and the high concentration maycorrespond to about 1000 ppm. In other embodiments, the lowconcentration of the hydrogen chloride may correspond to about 10 ppmand the high concentration to about 1000 ppm. In yet other embodiments,the low concentration of the hydrogen chloride may correspond to about 1ppm and the high concentration to about 10 ppm.

The composition having the variable concentration may be any suitablecomposition for treating a substrate during a rinse, and in someembodiments multiple compositions may simultaneously be varied inconcentration during the treatment of a substrate. Example compositionsthat may be utilized in addition to, or alternatively to, theabove-discussed hydrogen chloride are inorganic acids (for instance,hydrofluoric acid, nitric acid, sulfuric acid, phosphoric acid, etc.),organic acids (for instance, acetic acid, trichloroacetic acid, etc.)and bases (for instance, ammonium hydroxide, tetramethyl ammoniumhydroxide, tetraethyl ammonium hydroxide, etc.). The bases may beinorganic bases (for instance, ammonium hydroxide) or organic bases (forinstance, tetramethyl ammonium hydroxide). Any of the compositions maybe provided to the high and low concentrations discussed above withreference to the hydrogen chloride, or may be provided to other high andlow concentrations appropriate for particular applications.

The time for each iteration from a low concentration to a highconcentration, and back, may be any suitable duration; and may be, forexample, at least three seconds in embodiments in which the lowconcentration and high concentration differ from one another by an orderof magnitude or more.

The curve 32 is shown to be continuously variable during the entireduration illustrated in graph 30. The fluctuation of the concentrationbetween the low and high concentrations of a particular composition maybe ceased at some point, and the substrate exposed to a static,equilibrium, concentration of the composition.

The alteration of a concentration of one more compositions may providebenefits during the rinsing of a substrate including, for example,inhibition of etch conditions as discussed below with reference to FIGS.5-8, and assistance in particle removal as discussed below withreference to FIGS. 9-14.

Referring to FIG. 3, a graph 50 comprises an x-axis corresponding totime, and a y-axis corresponding to temperature. A curve 52 shows thevariation of the temperature of a rinse solution with time, andspecifically shows that the temperature is continuously variable over aperiod of time. In other words, the temperature is non-static over theperiod time, as opposed to reaching a static equilibrium. The showncurve corresponds to a temperature gradient. The curve may be consideredto comprise two iterations of a process in which the temperature goesfrom a first value 54 to a second value 56, and then back to the firstvalue; with one of the iterations comprising a peak 58 of curve 52, andthe other comprising a peak 60 of the curve. Although the showniterations go from a low temperature to a high temperature, and thenback; in other embodiments the iterations may go from a high temperatureto a low temperature, and then back.

The low temperature 54 and high temperature of 56 may differ from oneanother by at least about 30° C., and in some embodiments may differfrom one another by at least about 60° C. For instance, the lowtemperature 54 may correspond to about room temperature (23° C.), andthe high temperature 56 may correspond to about 90° C.

The time for each iteration from a low temperature to a hightemperature, and back, may be any suitable duration; and may be, forexample, at least a few seconds in embodiments in which the lowtemperature and high temperature differ from one another by at leastabout 30° C.

The curve 52 is shown to be continuously variable during the entireduration illustrated in graph 50. The fluctuation of the temperaturebetween the low and high temperatures may be referred to as temperaturesweeping. At some point the temperature sweeping may be ceased, and thesubstrate exposed to a static, equilibrium, temperature. Such may beaccomplished by flowing a static temperature rinse solution across thesubstrate.

The temperature sweeping may provide benefits during the rinsing of asubstrate by enhancing kinetics of reactions in some embodiments, or byinhibiting kinetics of reactions in other embodiments. Some examples ofsuch effects on kinetics are discussed below with reference to FIGS.9-14.

The dynamic alteration of various properties of the rinse solution maybe accomplished by any suitable method. An example method is describedwith reference to FIG. 4.

FIG. 4 shows an apparatus 70 comprising a vessel 72 that retains a rinsesolution bath 74. A pair of feed lines 76 and 78 are in fluid connectionwith the bath and configured for feeding liquid into the bath, and anoutlet line 80 is in fluid connection with the bath and configured fordraining liquid from the bath. Flow of liquid through the bath isillustrated by arrows 77. The liquid may flow continuously during thedynamic alteration of one or more properties of the bath solution.

Although two feed lines are illustrated, in other embodiments there maybe more than two feed lines. Also, although the feed lines are shownpassing liquid directly to the vessel, in other embodiments the feedlines may merge upstream of the vessel so that liquid is provided fromthe feed lines to the bath through an intermediate carrier line.

Feed line 76 is shown to be in fluid connection with a reservoir 90, andfeed line 78 is shown to be in fluid connection with a reservoir 92. Inoperation, one of the reservoirs may contain rinse solution under afirst condition, and the other reservoir may contain rinse solutionunder a second condition, and the relative ratio of the amount of liquidpassed through feed lines 76 and 78 may then determine the condition ofthe bath 74. The feed lines 76 and 78 may each be connected to aprocessor 75 which controls the amount of liquid passing through each ofthe lines. The control of liquid through the lines may compriseutilization of one or more valves (not shown).

In embodiments in which a continuously variable pH is desired, one ofthe reservoirs 90 and 92 may comprise rinse liquid at a pH that is at orbelow a lowest pH of the continuously variable pH (in other words, at orbelow the pH 14 of FIG. 1), and the other of the reservoirs may comprisethe rinse liquid at a pH that is at or above the highest pH of thecontinuously variable pH (in other words, at or above the pH 16 of FIG.1). The amount of rinse liquid provided through feed line 76 relative tothat provided through feed line 78 may then be continuously varied toachieve the continuously varying pH.

In embodiments in which a continuously variable concentration of acomponent is desired, one of the reservoirs 90 and 92 may comprise rinseliquid with a first concentration of the component that is at or below alowest component concentration of the continuously variable componentconcentration (in other words, at or below the component concentration34 of FIG. 2), and the other of the reservoirs may comprise the rinseliquid having a component concentration that is at or above the highestcomponent concentration of the continuously variable componentconcentration (in other words, at or above the component concentration36 of FIG. 2). The amount of rinse liquid provided through feed line 76relative to that provided through feed line 78 may then be continuouslyvaried to achieve the continuously varying component concentration.

In embodiments in which a continuously variable temperature is desired,one of the reservoirs 90 and 92 may comprise rinse liquid at atemperature that is at or below a lowest temperature of the continuouslyvariable temperature (in other words, at or below the temperature 54 ofFIG. 3), and the other of the reservoirs may comprise the rinse liquidat a temperature that is at or above the highest temperature of thecontinuously variable temperature (in other words, at or above thetemperature 56 of FIG. 3). The amount of rinse liquid provided throughfeed line 76 relative to that provided through feed line 78 may then becontinuously varied to achieve the continuously varying temperature.

If it is desired to continuously vary two or more parameters, multiplefeed lines and reservoirs may be provided so that the parameters may bealtered independently of one another; or, in other embodiments, multipleparameters may be simultaneously varied with two or more commonreservoirs so that the parameters are linked to one another. In someembodiments, one or more of the properties of temperature, acidconcentration, base concentration, passivating material concentrationand pH may be altered within the bath 74. If two or more of theproperties are altered, they may be altered simultaneously with oneanother in some embodiments, and/or sequentially with one another inother embodiments.

A plurality of semiconductor substrates 94, 96 and 98 are shown withinbath 74. The substrates may be held within a support structure (notshown). The substrates are treated simultaneously with one another, andaccordingly correspond to a batch of substrates treated within apparatus70. In other embodiments (not shown), semiconductor substrates may betreated singly, rather than in batch.

The semiconductor substrates may correspond to monocrystalline siliconwafers having one or more layers of integrated circuit components formedthereover. The terms “semiconductive substrate,” “semiconductorconstruction” and “semiconductor substrate” mean any constructioncomprising semiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone orin assemblies comprising other materials), and semiconductive materiallayers (either alone or in assemblies comprising other materials). Theterm “substrate” refers to any supporting structure, including, but notlimited to, the semiconductive substrates described above.

Although two inlet lines (i.e., feed lines) are shown extending intobath 74, in other embodiments only one feed line may be utilized ifthere are one or more mixing points along the feed line prior to theline entering the bath.

One or more of the embodiments of FIGS. 1-4 may be incorporated into anysemiconductor fabrication process in which it is desired to expose asemiconductor substrate to dynamic conditions. An example fabricationprocess in which one or more of the embodiments of FIGS. 1-4 may beutilized during rinsing of etchant and/or quenching of an etch isdescribed with reference to FIGS. 5-8; and examples of fabricationprocesses in which one or more of the embodiments of FIGS. 1-4 areutilized during particle removal are described with reference to FIGS.9-14.

Referring to FIG. 5, a semiconductor construction 100 is illustrated.The construction includes a semiconductor base 102 which may, forexample, comprise, consist essentially of, or consist of monocrystallinesilicon lightly doped with background p-type dopant. Although base 102is shown to be homogenous, it is to be understood that the base maycomprise numerous layers in some embodiments. For instance, base 102 maycorrespond to a semiconductor substrate containing one or more layersassociated with integrated circuit fabrication. In such embodiments,such layers may correspond to one or more of metal interconnect layers,barrier layers, diffusion layers, insulator layers, etc.

A material 104 is formed over base 102. Material 104 may comprise anysuitable material, and in some embodiments may be an electricallyinsulative material comprising one or more compositions selected fromthe group consisting of borophosphosilicate glass (BPSG), silicondioxide, silicon nitride, etc.

A patterned masking material 106 is formed over material 104. Themasking material 106 may comprise, for example,photolithographically-patterned photoresist. The patterned maskingmaterial forms a patterned mask having a pair of openings 108 extendingtherethrough.

Referring to FIG. 6, openings 108 are extended into material 104 withone or more suitable etches. Some etchant 110 is diagrammaticallyillustrated as fluid within openings 108. Such may occur if at leastpart of the etch utilized to form openings 108 is conducted with wetetching.

The etchant 110 comprises one or more compositions suitable for removingmaterial 104. Such compositions will vary depending on the compositionof material 104. In an example embodiment, material 104 may comprisesilicon dioxide and the etchant may comprise hydrofluoric acid (eitheralone, or with ammonium ion as a buffered oxide etch). In anotherexample embodiment, there may be at least some organic material exposedwithin openings 108, and the etchant may comprise piranha solution(hydrogen peroxide in combination with sulfuric acid, phosphoric acidand/or ammonium hydroxide) for removing at least a portion of theorganic material. In another example embodiment, there may be at leastsome oxide material exposed within openings 108 (silicon dioxide ormetal oxides), and the etchant may comprise QE2 solution (NH₄ incombination with phosphoric acid and other components, such as HF) forremoving at least a portion of the oxide material. The fluid-based etchmay be isotropic, and accordingly may undercut masking material 106, asshown.

The openings 108 within material 104 may be utilized for forming any ofnumerous components utilized in integrated circuitry. In someembodiments, the openings may be high aspect ratio openings suitable forfabrication of tightly-stacked capacitors for highly-integrated dynamicrandom access memory (DRAM) arrays.

Referring to FIG. 7, a rinse solution 112 is utilized to remove etchant110 from within openings 108. The rinse solution quickly removes most ofthe etchant 110, but eddies 114 of etchant 110 remain within the bottomsof the openings, or remain in a diluted form anywhere in the openings.The etchant remaining within the openings may problematically continueetching until the rinse solution manages to disperse the material 110from the openings.

In some embodiments, one or more of the procedures of FIGS. 1-3 isutilized to dynamically alter the rinse solution and thereby reduceproblematic etching occurring from etchant remaining in the eddies 114at the bottoms of the openings.

For instance, if the etchant comprises acid, then the rinse solution mayhave the fluctuating pH of FIG. 1 so that the acid is at least partiallyneutralized while the rinse solution is removing the acid from theopenings. The fluctuating pH may avoid problems that could occur with arinse solution having a static basic pH; with an example problem beingundesired etching of base-sensitive materials.

As another example, if the etching induced by the etchant has a ratesignificantly influenced by temperature, the rinse solution may have thefluctuating temperature of FIG. 3 while the rinse solution is removingthe etchant 110 from within the openings. The fluctuating temperaturemay avoid problems that could occur with a static low-temperature rinsesolution or static high-temperature rinse solution, such as undesiredthermal stresses on materials. Such thermal stresses may occur ifadjacent materials have substantially different thermal coefficients.

As yet another example, the etchant may be passivated (i.e., quenched)by various materials. For instance, acids may be quenched by bases;bases may be quenched by acids; and various etchants may be quenched byoxidants, such as hydrogen peroxide or ozone, or by reductants. Therinse solution may have the fluctuating concentration of FIG. 2 whilethe rinse solution is removing the etchant 110 from within the openings,with such fluctuating concentration being the concentration of apassivating material. The fluctuating concentration may avoid problemsthat could occur with a static concentration of the passivating materialin the rinse solution, such as undesired etching induced by thepassivating material.

In some embodiments, two or more of the procedures of FIGS. 1-3 may beutilized simultaneously with one another. For instance, theconcentration of passivating material within a rinse solution may befluctuated together with a temperature of the rinse solution duringutilization of the rinse solution to remove etchant. Also, in someembodiments, first fluctuating conditions for quenching an etch may befollowed by second fluctuating conditions for removing contaminants.

After the rinse solution is utilized to remove the etchant, deionizedwater may be utilized to remove the rinse solution, and thenconstruction 100 may be dried to leave the construction shown in FIG. 8.Subsequently, integrated circuit components may be formed within theopenings. For instance, capacitors may be formed within the openingsduring fabrication of DRAM.

FIGS. 9 and 10 illustrate an example embodiment for removing particlesfrom over a semiconductor substrate. Referring to FIG. 9, asemiconductor construction 120 is shown to comprise a semiconductorsubstrate 122 having particles 124 thereover. The substrate 122 maycomprise, for example, a monocrystalline silicon wafer. The substratemay have a silicon-containing surface 123, such as a surface comprising,consisting essentially of, or consisting of one or more of silicon,silicon dioxide or silicon nitride. The particles 124 may compriseparticles formed during etching or other semiconductor processing. Theparticles may comprise, consist essentially of, or consist of any ofvarious materials; including, for example, one or more of metals,silicon, silicon dioxide, silicon nitride, organic materials, etc.

Particles 124 may adhere to surface 123 through chemical bonds and/orelectrostatic interactions. If the particles adhere solely throughelectrostatic interactions, one or both of the surface 123 and theparticles 124 may comprise pH-sensitive charged groups. For instance,particles 124 may comprise carboxylate groups that are negativelycharged above a threshold pH, and neutrally charged below the thresholdpH. As another example, particles 124 may comprise amine groups that arepositively charged below a threshold pH, and neutrally charged above thethreshold pH.

In some embodiments, surface 123 will comprise a negative charge (forexample, from hydroxyl groups extending from the surface), and particles124 will be electrostatically retained to the surface throughpositively-charged amine groups. The electrostatic interaction can thusbe disrupted by exposing particles 124 to a pH which neutralizes thepositively charged amine groups, or changes a charge to be negative.

FIG. 10 shows construction 120 as particles 124 are exposed to a rinsesolution 126 comprising a pH which neutralizes the electrostaticinteractions and causes particles 124 to be dispersed into the rinsesolution (as illustrated by arrows 125). The rinse solution may have adynamically changing pH utilizing methodology described above withreference to FIG. 1. The dynamically changing pH enables appropriatepH's to be found for rinsing different types of particles from asubstrate. Specifically, there may be many types of particles with manyvarying electrostatic interactions that retain the particles todifferent types of surfaces across a semiconductor substrate.Utilization of the pH sweeping of FIG. 1 within a rinse solution mayenable each type of particle to be removed. Specifically, the pH sweepmay be configured to pass through the particular pH's that neutralizeelectrostatic interaction of each type of particle so that eventuallyeach type of particle will be neutralized and removed from the surface.In some embodiments, at least some of the particles may have theircharge reversed relative to the charge of the substrate during the pHsweeping so that the electrostatic interactions between the substrateand particles change form attractive to repulsive, which may aid inremoving the particles from the substrate.

A problem that may occur is that the strength of the electrostaticinteractions between particular types of particles and the substrate mayfluctuate as the pH fluctuates within the rinse solution. Accordingly,particles ejected from one location of the substrate may settle ontoanother location of the substrate. For instance, there are often manymore particles along the edges of a semiconductor substrate than acrossa central region of the substrate, and the pH sweeping within the rinsesolution may cause particles to migrate from the edges of thesemiconductor substrate to the central region. If such problems occur,the pH sweeping may be conducted through several iterations until thenumber of particles remaining on the substrate has been reduced to alevel below a desired tolerance.

If the particles are retained on substrate 122 through chemical bonds,as well as electrostatic interactions, etchant may be included withinthe rinse solution to weaken the chemical bonds. The etchant maycomprise a composition which removes material from surface 123 of thesubstrate, and/or may comprise a composition which removes material fromthe particles.

FIGS. 11 and 12 illustrate an embodiment in which the rinse solutioncomprises a composition which removes material from surface 123. FIG. 11shows construction 120 at a processing stage subsequent to FIG. 9, andas surface 123 is initially exposed to rinse solution 126. The etchantwithin the rinse solution removes substrate 122 from under theparticles. Such undercuts the particles, and specifically forms voids128 extending under particles 124. The undercutting of the particlesweakens chemical bonding between the particles 124 and the substrate122. In an example embodiment, surface 123 may comprise silicon dioxide,and the etchant may comprise hydrofluoric acid.

The concentration of the etchant within the rinse solution may bedynamically altered utilizing the methodology of FIG. 2. Such may avoid,or at least alleviate, undesired etching of substrate 122.

If the etchant has an etch rate significantly influenced by temperature,the temperature of the rinse solution may be dynamically alteredutilizing the methodology of FIG. 3, either additionally, oralternatively, to the alteration of the concentration of the etchantwithin the rinse solution.

Referring to FIG. 12, particles 124 are dispersed from surface 123. Suchdispersal may be due entirely to the undercutting of the particlesinduced by the etching, and accordingly may occur without pH sweepingwithin the rinse solution. Alternatively, the dispersal may be enhancedby reducing electrostatic attraction between the particles and thesubstrate through pH sweeping within the rinse solution. Such pHsweeping may occur during or after the utilization of the etchant toundercut the particles.

FIGS. 13 and 14 illustrate an embodiment in which the rinse solutioncomprises a composition which removes material from particles 124. FIG.13 shows construction 120 at a processing stage subsequent to FIG. 9,and as particles 124 are initially exposed to rinse solution 126. Theetchant within the rinse solution removes material from the particles,and alters the outer surface of the particles to reduce the area of theinterfaces between the particles and the substrate. The etching of theparticles thus weakens chemical bonding between the particles 124 andthe substrate 122. In an example embodiment, the particles may compriseorganic material, and the etchant may be a piranha mixture.

The concentration of the etchant within the rinse solution may bedynamically altered utilizing the methodology of FIG. 2. Such may avoid,or at least alleviate, undesired etching of substrate 122.

If the etchant has an etch rate significantly influenced by temperature,the temperature of the rinse solution may be dynamically alteredutilizing the methodology of FIG. 3, either additionally, oralternatively, to the alteration of the concentration of the etchantwithin the rinse solution.

Referring to FIG. 14, particles 124 are dispersed from surface 123. Suchdispersal may be due entirely to the reduction of the amount ofinterface between the particles and substrate induced by the etching,and accordingly may occur without pH sweeping within the rinse solution.Alternatively, the dispersal may be enhanced by reducing electrostaticattraction between the particles and the substrate through pH sweepingwithin the rinse solution. Such pH sweeping may occur during or afterthe etching of the particles.

Although FIGS. 10-14 illustrate embodiments in which the etching of thesubstrate occurs separately from the etching of the particles, in otherembodiments etchant may be chosen which etches both the substrate andthe particles.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

1. A method of treating a semiconductor substrate comprising exposingthe substrate to one or more compositions, wherein said exposure to theone or more compositions comprises only exposure to non-staticconcentration gradients of the one or more compositions for a durationof at least several seconds.
 2. The method of claim 1 wherein the one ormore compositions include one or more inorganic acids.
 3. The method ofclaim 1 wherein the one or more compositions include one or more organicacids.
 4. The method of claim 1 wherein the one or more compositionsinclude one or more inorganic bases.
 5. The method of claim 1 whereinthe one or more compositions include one or more organic bases.
 6. Themethod of claim 1 wherein the one or more compositions include one ormore of ammonium hydroxide, tetramethyl ammonium hydroxide, andtetraethyl ammonium hydroxide.
 7. A method of treating a semiconductorsubstrate, comprising: etching one or more materials associated with thesubstrate; and substantially ceasing the etching by rinsing thesubstrate with a solution comprising a continuously varyingconcentration of passivating material.
 8. The method of claim 7 whereinthe passivating material is hydrogen chloride.
 9. The method of claim 7wherein the passivating material comprises a base.
 10. The method ofclaim 7 wherein the passivating material comprises an acid.
 11. Themethod of claim 7 wherein the continuously varying the concentrationcomprises at least one iteration of: increasing the concentration froman initial low concentration to a high concentration; and decreasing theconcentration from the high concentration back to the low concentration.12. A method of forming openings during semiconductor fabrication,comprising: forming a patterned mask over a material, the mask havingone or more openings extending therethrough; extending the one or moreopenings into the material by etching the material with an etchant; andsubstantially ceasing the etching by rinsing the substrate with asolution comprising a continuously varying concentration of passivatingmaterial.
 13. The method of claim 12 wherein the passivating materialcomprises hydrogen chloride.
 14. The method of claim 12 wherein thepassivating material comprises an acid or a base.
 15. The method ofclaim 12 further comprising exposing the substrate to a continuouslyvarying temperature during the exposure of the substrate to thecontinuously varying concentration of the passivating material.
 16. Amethod of removing particles from over a semiconductor substratecomprising exposing the substrate to a pH that varies dynamicallythrough at least one iteration of variation from a first level to asecond level different from the first level, and then back to the firstlevel.
 17. The method of claim 16 wherein the first level is higher pHthan the second level.
 18. The method of claim 16 wherein the firstlevel is lower pH than the second level.
 19. The method of claim 16further comprising varying a temperature of a solution comprising the pHduring the variation of the pH.
 20. The method of claim 16 furthercomprising exposing the substrate to dynamically varying concentrationof etchant during the exposure to the varying pH, with the etchant beingsuitable to remove portions of the substrate from under the particlesand thereby at least partially undercut the particles.
 21. The method ofclaim 16 further comprising exposing the substrate to dynamicallyvarying concentration of etchant during the exposure to the varying pH,with the etchant being suitable to remove material from the particles.22. A method of treating multiple of semiconductor substrates,comprising: placing the substrates within a bath of flowing liquid;providing at least two feed lines to the bath, one of the feed linescomprising the liquid at a first temperature, and the other comprisingthe liquid at a second temperature that is higher than the firsttemperature; altering a relative amount of liquid provided by the firstand second feed lines to alter a temperature within the bath; thetemperature being continuously altered while the semiconductorsubstrates are within the bath so that the substrates are exposed tonon-static temperature within the bath; and while the substrates arewithin the bath, exposing the semiconductor substrates to one or more ofcontinuously varying pH, continuously varying acid concentration,continuously varying base concentration, and continuously varyingpassivating material concentration.
 23. The method of claim 22 whereinthe semiconductor substrates are exposed to continuously varying pHwhile the semiconductor substrates are within the bath.
 24. The methodof claim 22 wherein the semiconductor substrates are exposed tocontinuously varying acid concentration while the semiconductorsubstrates are within the bath.
 25. The method of claim 22 wherein thesemiconductor substrates are exposed to continuously varying baseconcentration while the semiconductor substrates are within the bath.26. The method of claim 22 wherein the semiconductor substrates areexposed to continuously varying passivating material concentration whilethe semiconductor substrates are within the bath.